Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-07-12
2005-07-12
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S591000, C438S287000, C438S792000
Reexamination Certificate
active
06916730
ABSTRACT:
First of all, a semiconductor substrate is provided. Then a gate oxide layer having an uniform thickness is formed on the semiconductor substrate by way of using thermal oxidation. Subsequently, a doping layer is formed on the gate oxide layer by a plasma doped process. Next, forming a poly-layer on the doping layer of the gate oxide layer, wherein the poly-layer has an ions-distribution. Afterward, defining the poly-layer to form a poly-gate. The P-type ions are then implanted into the poly-gate and the substrate by way of using a self-aligned process. Finally, performing a thermal annealing process to form a uniform ion-implanting region and a poly-gate having a lower contact-resistance.
REFERENCES:
patent: 6184110 (2001-02-01), Ono et al.
patent: 6200651 (2001-03-01), Roche et al.
patent: 6432780 (2002-08-01), Chen
patent: 2002/0098710 (2002-07-01), Sandhu et al.
Chen Jack
Macronix International Co. Ltd.
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