Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-07-11
2009-02-17
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S664000, C257SE21622
Reexamination Certificate
active
07491635
ABSTRACT:
A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.
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Kittl Jorge Adrian
Kottantharyil Anil
Lauwers Anne
Van Dal Marcus Johannes Henricus
Veloso Anabela
Chaudhari Chandra
Interuniversitair Microelektronica Centrum
Koninklijke Philips Electronics
McDonnell Boehnen & Hulbert & Berghoff LLP
Texas Instruments Incorporated
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