Method for forming a fluorine containing silicon oxide film

Details Method for forming a fluorine containing silicon oxide film Method for forming a fluorine containing silicon oxide film

1996-08-09

1998-09-01

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427539, 4272551, 4272553, C23C 1642, H05H 100

Patent

active

058008772

ABSTRACT:
In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.

REFERENCES:
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 5288518 (1994-02-01), Homma
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5420075 (1995-05-01), Homma et al.
patent: 5429995 (1995-07-01), Nishiyama et al.

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