Method for forming a fine pattern of an aluminum film

Details Method for forming a fine pattern of an aluminum film Method for forming a fine pattern of an aluminum film

1980-09-24

1982-02-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 1566591, 156665, 204192E, 204192N, 427 38, 427 431, C23F 102

Patent

active

043148743

ABSTRACT:
A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.

REFERENCES:
patent: 3436327 (1969-04-01), Shockley
patent: 3682729 (1972-08-01), Gukelberger et al.
patent: 4093503 (1978-06-01), Harris et al.
J. Vac. Sci. Technol., vol. 10, No. 6, Nov./Dec. 1973, Selective Area Metallization by Electron-Beam Controlled Direct Deposition by Ballantyne et al., pp. 1094-1097.

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