Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2007-06-07
2011-11-29
Duda, Kathleen (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S394000, C430S961000
Reexamination Certificate
active
08067146
ABSTRACT:
A method for forming a fine pattern a semiconductor device includes the steps of forming a first photoresist pattern over a semiconductor substrate having an underlying layer; coating a pattern hardening coating agent over the first photoresist pattern, thereby forming a pattern hardening film; forming a second photoresist film over the resulting structure; and selectively exposing and developing the second photoresist film, thereby forming a second photoresist pattern to be defined between neighboring first photoresist pattern.
REFERENCES:
patent: 5976759 (1999-11-01), Urano et al.
patent: 6015650 (2000-01-01), Bae
patent: 2003/0027884 (2003-02-01), Kim et al.
patent: 2004/0018346 (2004-01-01), Jung et al.
patent: 2004/0081914 (2004-04-01), Imai et al.
patent: 2004/0224265 (2004-11-01), Endo et al.
patent: 2006/0216649 (2006-09-01), Paxton et al.
patent: 2007/0003861 (2007-01-01), Jung et al.
patent: 2007/0281248 (2007-12-01), Levinson et al.
patent: 2005-003840 (2005-01-01), None
patent: 10-2001-0004081 (2001-01-01), None
patent: 10-2005-0116593 (2005-12-01), None
patent: 10-2006-0116490 (2006-11-01), None
patent: 10-2006-0126213 (2006-12-01), None
Duda Kathleen
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Raymond Brittany
LandOfFree
Method for forming a fine pattern in a semicondutor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a fine pattern in a semicondutor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a fine pattern in a semicondutor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4268468