Method for forming a fine pattern

Details Method for forming a fine pattern Method for forming a fine pattern

1995-01-17

1996-05-21

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566551, 216 41, 4302701, 430313, 437229, H01L 2100

Patent

active

055185797

ABSTRACT:
An acid solution is fed onto a TiN film formed on a semiconductor substrate. So, the TiN film is dipped into the acid solution, whereupon the surface of the semiconductor substrate is neutralized or is made less basic. Then, a chemically amplified resist, containing an acid generator which produces an acid when irradiated with radiant rays and a compound reactive to acids, is applied to the semiconductor substrate, to form a resist film. This is followed by a step for sending radiant rays upon the resist film to expose it. Then, the exposed resist pattern is developed to form a resist pattern without footing or scumming and under-cutting.

REFERENCES:
patent: 5123998 (1992-06-01), Kishimura
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5275689 (1994-01-01), Felten et al.

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