Method for forming a fine contact hole in a semiconductor device

Details Method for forming a fine contact hole in a semiconductor device Method for forming a fine contact hole in a semiconductor device

1996-08-28

1998-06-16

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438701, 438713, 438723, H01L 21336

Patent

active

057670196

ABSTRACT:
Disclosed is a method for forming a fine contact hole, and more particularly, a method capable of minimizing the loss of a silicon substrate. In the method for forming the contact hole according to the present invention, since the spacer is formed on the sidewall in the contact hole at the time of performing the dry etching process which makes it wide the approach to the contact hole, the contact area is hardly damaged by the etchant. Then, the dry etching process in accordance with the present invention can minimizes the loss of the substrate because the substrate to be exposed is under the protection of the insulating layer 43. The substrate can be less damaged than 100

REFERENCES:
patent: 5068202 (1991-11-01), Crotti et al.
patent: 5219792 (1993-06-01), Kim et al.
patent: 5477975 (1995-12-01), Rice et al.
patent: 5556501 (1996-09-01), Collins et al.

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