Method for forming a film on a substrate by activating a reactiv

Details Method for forming a film on a substrate by activating a reactiv Method for forming a film on a substrate by activating a reactiv

1994-03-01

1995-01-31

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427575, 427576, 427578, 427579, 427596, 437 67, 437919, 148DIG50, B05D 306

Patent

active

053857631

ABSTRACT:
A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least part of the deposit species on the substrate while retaining a pressure in the vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

REFERENCES:
patent: 4009680 (1977-03-01), Fengler
patent: 4501225 (1985-02-01), Nagao et al.
patent: 4645564 (1987-02-01), Morie et al.
patent: 4673592 (1987-06-01), Porter et al.
patent: 4675205 (1987-06-01), Boncoeur et al.
patent: 4743570 (1988-05-01), Lamont, Jr.
patent: 4747928 (1988-05-01), Takahashi et al.
patent: 4800174 (1989-01-01), Ishihara et al.
Patent Abstract of Japan, vol. 15, No. 40, to Japanese Patent Document No. 02-277238 dated Jan. 30, 1991.

Affiliated with

Also associated with

Rating

Method for forming a film on a substrate by activating a reactiv does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a film on a substrate by activating a reactiv, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a film on a substrate by activating a reactiv will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1101341