Method for forming a film on a substrate by activating a reactiv

Details Method for forming a film on a substrate by activating a reactiv Method for forming a film on a substrate by activating a reactiv

1991-04-16

1992-10-20

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427576, 427578, 427579, 4272551, 4272552, 4272553, 4272556, 427255, B05D 306

Patent

active

051568810

ABSTRACT:
A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.

REFERENCES:
patent: 4009680 (1977-05-01), Fengley
patent: 4501225 (1985-02-01), Nagao et al.
patent: 4673592 (1987-06-01), Porter et al.
patent: 4675205 (1987-06-01), Bonduy et al.
patent: 4743570 (1988-05-01), Tamont, Jr.
patent: 4747928 (1988-05-01), Takahashi et al.
patent: 4800174 (1989-11-01), Ishihasa et al.
Japanese Patent Disclosure (Kokai) No. 59-163831, Sugii et al., Sep. 14, 1984.

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