Method for forming a field-effect transistor including anodic ox

Details Method for forming a field-effect transistor including anodic ox Method for forming a field-effect transistor including anodic ox

1994-03-29

1996-05-28

Fourson, George

Fishing, trapping, and vermin destroying

437 21, 437 29, 437 71, 437170, 148DIG117, 148DIG163, H01L 21265

Patent

active

055211070

ABSTRACT:
An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

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