Method for forming a DRAM semiconductor device with a sense...

Details Method for forming a DRAM semiconductor device with a sense... Method for forming a DRAM semiconductor device with a sense...

2008-07-22

2008-07-22

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27097, C438S200000, C438S533000

Reexamination Certificate

active

07402864

ABSTRACT:
A method for forming a sense amplifier of a semiconductor device prevents bit lines from being bridged to each other by a stepped portion created on an insulation interlayer due to irregular density of a P-type impurity, which is ion-implanted into an insulation interlayer in a P+ pickup region when a sense amplifier of a semiconductor device is formed. Yield ratio of semiconductor devices is improved.

REFERENCES:
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patent: 2005/0001254 (2005-01-01), Hidaka et al.
patent: 2005/0242441 (2005-11-01), Thompson et al.
patent: 11-168192 (1999-06-01), None
patent: 1019970048911 (1997-07-01), None
patent: 1019980015453 (1999-05-01), None
patent: 1020050087013 (2005-08-01), None

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