Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-01-04
2005-01-04
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S152000, C438S157000, C438S166000, C438S482000, C438S486000, C438S585000, C438S587000, C438S588000
Reexamination Certificate
active
06838322
ABSTRACT:
A method for forming a polysilicon FinFET (10) or other thin film transistor structure includes forming an insulative layer (12) over a semiconductor substrate (14). An amorphous silicon layer (32) forms over the insulative layer (12). A silicon germanium seed layer (44) forms in association with the amorphous silicon layer (32) for controlling silicon grain growth. The polysilicon layer arises from annealing the amorphous silicon layer (32). During the annealing step, silicon germanium seed layer (44), together with silicon germanium layer (34), catalyzes silicon recrystallization to promote growing larger crystalline grains, as well as fewer grain boundaries within the resulting polysilicon layer. Source (16), drain (18), and channel (20) regions are formed within the polysilicon layer. A double-gated region (24) forms in association with source (16), drain (18), and channel (20) to produce polysilicon FinFET (10).
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Barr Alexander L.
Mathew Leo
Nguyen Bich-Yen
Pham Daniel T.
Vandooren Anne M.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Thomas Toniae M.
Wilczewski Mary
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