Method for forming a dielectric layer with an air gap, and a...

Details Method for forming a dielectric layer with an air gap, and a... Method for forming a dielectric layer with an air gap, and a...

2011-08-09

2011-08-09

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S637000, C438S700000, C438S745000, C438S902000, C257S758000, C257S774000, C257SE23142, C257SE23145

Reexamination Certificate

active

07994046

ABSTRACT:
A method of forming a semiconductor structure includes providing a first dielectric layer with an opening above a substrate. An exposed surface portion of the first dielectric layer in the opening is transformed. A protective dielectric layer is formed along the transformed portion of the first dielectric layer. The opening is filled with a conductive material. The transformed portion of the first dielectric layer is removed to form an air gap between the protective dielectric layer and a remaining portion of the first dielectric layer.

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