Method for forming a CVD film

Details Method for forming a CVD film Method for forming a CVD film

1997-12-17

1999-10-05

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438905, H01L 2144

Patent

active

059638346

ABSTRACT:
A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

REFERENCES:
patent: 5326723 (1994-07-01), Petro et al.
patent: 5709757 (1998-01-01), Hatano et al.
patent: 5785796 (1998-07-01), Lee

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