Method for forming a contact with activation and silicide formin

Details Method for forming a contact with activation and silicide formin Method for forming a contact with activation and silicide formin

1995-07-18

1997-04-15

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438453, 438533, 438664, H01L 2128

Patent

active

056209266

ABSTRACT:
A field oxide film 12, an n.sup.+ -type dispersion layer 13, and an interlayer insulating film 14 are formed on a p-type semiconductor substrate, and a contact hole is formed therein. A titanium film 15 is deposited on the surface formed thus far, and arsenic is ion-implanted into a contact region through the titanium film, forming a phosphorus-dispersed layer. The substrate is heat-treated to activate the impurity in the phosphorus-dispersed layer 16 and to cause titanium and silicon to react with each other, thereby forming a titanium silicide film 17 in the contact region. A metal film is then deposited and patterned into a metal wiring 18 without removing a silicon nitride film 15a which has been produced from the titanium film.

REFERENCES:
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4788160 (1988-11-01), Havemann et al.
patent: 5102827 (1992-04-01), Chen et al.
patent: 5286678 (1994-02-01), Rastogi
patent: 5314832 (1994-05-01), Deleonibus
patent: 5330921 (1994-07-01), Yoshida et al.
patent: 5444024 (1995-08-01), Anjum et al.
"Semiconductor Device and Manufacture Thereof", Japio Abstract No. 01660462, Nov. 1985, p. 161.
"Manufacture of Semiconductor Device", Japio Abstract No. 03139134, Jul. 1990, p. 78.

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