Method for forming a contact to a substrate

Details Method for forming a contact to a substrate Method for forming a contact to a substrate

1997-05-15

1999-09-28

Brown, Peter Toby

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438634, 438637, H01L 2144, H01L 21768

Patent

active

059603046

ABSTRACT:
A contact (26) to a substrate (12) is formed using a first stopping layer (14), an insulating layer (16), and a second stopping layer (18). The second stopping layer (18) promotes a more accurate and controlled removal of the first stopping layer (14). A self-aligned contact (122) may be formed in a similar manner using a first stopping layer (110), an insulating layer (112), and a second stopping layer (114).

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patent: 5661083 (1997-08-01), Chen et al.
patent: 5668052 (1997-09-01), Mataumoto et al.

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