Method for forming a contact plug over an underlying metal line

Details Method for forming a contact plug over an underlying metal line Method for forming a contact plug over an underlying metal line

1999-08-25

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438624, 438633, 438672, H01L 214763

Patent

active

061469874

ABSTRACT:
A method for forming a contact plug that lands on a metal line of an interconnect structure formed on a semiconductor substrate. First, a first insulating layer is formed atop the substrate and between gaps in the interconnect structure. Next, an etching stop layer is formed on the first insulating layer. A second insulating layer is formed atop the etching stop layer. The second insulating layer is patterned and etched, stopping at the etching stop layer, to form a contact opening. The portion of the etching stop layer left exposed by the contact opening is removed. Finally, a barrier metal layer is formed along the walls of the contact opening and a conducting layer is deposited into the contact opening.

REFERENCES:
patent: 5985747 (1999-11-01), Taguchi

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