Method for forming a contact opening with multilevel etching

Details Method for forming a contact opening with multilevel etching Method for forming a contact opening with multilevel etching

1998-12-24

2000-01-04

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438724, H01L 2100

Patent

active

060109688

ABSTRACT:
A multilevel contact etching method to form a contact opening is provided. The method contains using an inductively coupled plasma (ICP) etcher to produce a high plasma density condition. The plasma gas etchant is composed of C.sub.4 F.sub.8 /CH.sub.2 F.sub.2 /CO/Ar with a ratio of 3:4:12:80 so that silicon nitride can be selectively etched while the silicon and silicide are not etched. Each content ratio of the plasma gas etchant allows a variance of about 20%. Wall temperature of the ICP etcher is about 100.degree. C.-300.degree. C. A cooling system for a wafer pad is about -20.degree. C.-20.degree. C. Chamber pressure is about 5-100 mtorr. Bias power on the wafer pad is about 1000 W-3000 W. Source power of an inductance coil is about 500 W-3000 W.

REFERENCES:
patent: 5817579 (1998-10-01), Ko et al.
patent: 5854124 (1998-12-01), Lin
patent: 5866485 (1999-02-01), Kirchoff et al.
patent: 5904566 (1999-05-01), Tao et al.

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