Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1999-06-11
2000-11-14
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438724, 438738, 438740, H01L 2100
Patent
active
061470074
ABSTRACT:
The present invention relates to a method of forming a contact hole on the semiconductor wafer. The semiconductor wafer comprises, in ascending order, a substrate, a silicon nitride layer, a silicon oxide layer, and a photo-resist layer. There is a hole in the photo-resist layer. The method comprises: (1) performing a first anisotropic etching process in a downward direction to remove the silicon oxide layer under the hole down to the surface of the silicon nitride layer to form a recess; (2) performing an in-situ plasma cleaning process to entirely remove the polymer material remaining at the bottom of the recess; (3) performing an in-situ second anisotropic etching process in a downward direction to remove the silicon nitride layer from the bottom of the recess down to the surface of the substrate to form the contact hole; (4) performing another in-situ cleaning process to entirely remove the polymer material remaining at the bottom of the contact hole.
REFERENCES:
patent: 5883006 (1999-03-01), Iba
patent: 6008121 (1999-12-01), Yang et al.
patent: 6043164 (2000-03-01), Ngugen et al.
patent: 6063711 (2000-05-01), Chao et al.
Chen Tong-Yu
Huang Wei-Che
Yang Chan-Lon
Hsu Winston
Powell William
United Microelectronics Corp.
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