Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Patent
1998-04-16
2000-07-04
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
438 46, H01L 2120, H01L 2100
Patent
active
060838132
ABSTRACT:
The method for forming the compound semiconductor device includes the step of forming a buffer layer so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the method for forming the compound semiconductor device can avoid a shape change and a thickness change because of defect of the periodic corrugation. Further, the compound semiconductor device includes a buffer layer formed so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the compound semiconductor device can get superior characteristics of the compound semiconductor device.
REFERENCES:
patent: 4859628 (1989-08-01), Knight et al.
patent: 5585309 (1996-12-01), Mori et al.
"A novel techinque for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD", R. Bhat et al., Journal of Crystal Growth 107 (1991) pp. 871-877.
Bowers Charles
Christianson Keith
OKI Electric Industry Co., Ltd.
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