Method for forming a common transfer contact of a thin film tran

Details Method for forming a common transfer contact of a thin film tran Method for forming a common transfer contact of a thin film tran

1995-12-29

1997-04-29

Gross, Anita Pellman

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

349153, G02F 11345, G02F 11339

Patent

active

056254768

ABSTRACT:
A method for forming a common transfer contact of a liquid crystal display between a common electrode substrate and a thin film transistor substrate includes the steps of printing a seal pattern of a proper sealant on the common electrode substrate, assembling the common electrode substrate and the thin film transistor substrate by means of the seal pattern, cutting the common electrode substrate along a properly defined cutting line, and dotting the gap between the common electrode substrate and the thin film transistor substrate with an electrically conductive liquid-phase substance of a high viscosity to penetrate the gap by capillary action to thereby establish a common transfer contact between the common electrode substrate and the thin film transistor when being hardened.

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patent: 5467210 (1995-11-01), Kishigami
patent: 5519524 (1996-05-01), Fergason et al.
patent: 5528403 (1996-06-01), Kawaguchi et al.

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