Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-11-27
2007-11-27
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S781000, C438S782000
Reexamination Certificate
active
10914523
ABSTRACT:
A method for forming a coating film, comprises the steps of: applying a raw material of a low dielectric constant onto a surface of a plate-like material; reducing oxygen concentration in the atmosphere surrounding the plate-like material to be less than or equal to 1% before a surface temperature of said plate-like material to be treated rises to 200° C.; thereafter heating said plate-like material to a temperature greater than or equal to 400° C.; and then maintaining the oxygen content in the atmosphere to be less than or equal to 1% until the surface temperature of said plate-like material to be treated lowers to 200° C. The raw material is an organic SOG obtained by hydrolyzing and condensing at least one alkoxysilane compound into an organic solvent under an acid catalyst.
REFERENCES:
patent: 5431700 (1995-07-01), Sloan
patent: 5802856 (1998-09-01), Schaper et al.
patent: 6143360 (2000-11-01), Zhong
patent: 6225240 (2001-05-01), You et al.
patent: 6261365 (2001-07-01), Matsuyama et al.
patent: 2001/0029111 (2001-10-01), You et al.
patent: 2002/0006876 (2002-01-01), Hongo et al.
patent: 61-084837 (1986-04-01), None
patent: 4216827 (1992-08-01), None
patent: 07-273051 (1995-10-01), None
patent: 9137121 (1997-05-01), None
patent: 09-199503 (1997-07-01), None
patent: 09-213693 (1997-08-01), None
patent: 10-098037 (1998-04-01), None
patent: 11-087510 (1999-03-01), None
patent: 2001-148379 (2001-05-01), None
Hari Singh Nalwa, Handbook of IOW aand High Dielectric COnstant Materials and Thier Applications, Academic Press: San Diego, 1999 pp. 52-53.
Wolf, Silicon Processing for the VLSI Era, vol. 2: Process Integration, LAttice Press: SUnset Beach, CA. 2000, pp. 797-801.
Aoki Taiichiro
Endo Hiroki
Nakamura Akihiko
Blackman William D.
Carrier Joseph P.
Carrier Blackman & Associates P.C.
Rao Steven H
Tokyo Ohka Kogyo Co. Ltd.
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