Method for forming a channel zone of a transistor and NMOS...

Details Method for forming a channel zone of a transistor and NMOS... Method for forming a channel zone of a transistor and NMOS...

2006-05-02

2006-05-02

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S256000, C257S285000, C438S135000, C438S268000

Reexamination Certificate

active

07038272

ABSTRACT:
In a method for forming a channel zone in field-effect transistors, a polysilicon layer is patterned above the channel zone to be formed. The polysilicon layer serves as a mask substrate for the subsequent doping of the channel zone. The expedient patterning of the polysilicon layer with holes in a gate region and pillars in a source region enables the channel zone to be doped more lightly. In another embodiment, the novel method is used for a channel width shading of a PMOS transistor cell.

REFERENCES:
patent: 5736445 (1998-04-01), Pfirsch
patent: 5879968 (1999-03-01), Kinzer
patent: 6274904 (2001-08-01), Tihanyi
patent: 6794251 (2004-09-01), Blanchard
patent: 2 319 395 (1998-05-01), None

Affiliated with

Also associated with

Rating

Method for forming a channel zone of a transistor and NMOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a channel zone of a transistor and NMOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a channel zone of a transistor and NMOS... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3620099