Method for forming a cavity structure on SOI substrate and...

Details Method for forming a cavity structure on SOI substrate and... Method for forming a cavity structure on SOI substrate and...

2005-08-16

2005-08-16

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C438S048000

Reexamination Certificate

active

06930366

ABSTRACT:
The present publication discloses a method for forming cavities in prefabricated silicon wafers comprising a first silicon layer (1), a second monocrystalline silicon layer, or a so-called structural layer (3), oriented substantially parallel with said first silicon layer (1) and an insulating layer (2) situated between said first and second layers (1, 3). According to the method, in at least one of the conducting silicon layers (1, 3) are fabricated windows (4) extending through the thickness of the layer, and cavities are etched in the insulating layer (2) by means of etchants passed to the layer via said fabricated windows (4). According to the invention, subsequent to the fabrication step of the windows (4) and prior to the etching step, a thin porous layer (5) is formed on the surface to be processed such that the etchants can be passed through said porous layer into said cavities (6) being etched and, after the cavities (6) are etched ready, at least one supplementary layer (7) is deposited in order to render to the material of said porous layer impermeable to gases.

REFERENCES:
patent: 5510276 (1996-04-01), Diem et al.
patent: 5690841 (1997-11-01), Elderstig
patent: 6093330 (2000-07-01), Chong et al.
patent: 6171979 (2001-01-01), Aoi
patent: 1 077 475 (2001-02-01), None
patent: 2000-124465 (2000-04-01), None

Affiliated with

Also associated with

Rating

Method for forming a cavity structure on SOI substrate and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a cavity structure on SOI substrate and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a cavity structure on SOI substrate and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3499764