Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-20
2010-10-26
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21646, C438S253000
Reexamination Certificate
active
07821052
ABSTRACT:
A method for use during fabrication of a semiconductor device comprises the formation of buried digit lines and contacts. During formation, a buried bit line layer may be used as a mask to etch one or more openings in a dielectric layer. A conductive layer is then formed in the one or more openings in the dielectric layer, and is then planarized to form one or more individual contact plugs. Next, the buried bit line layer is etched to recess the buried bit line layer, and a capacitor plate is formed to contact the contact plug.
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Green James E.
McDaniel Terrence B.
Booth Richard A.
Micro)n Technology, Inc.
Romani Michael E.
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