Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1997-06-09
1998-08-25
Niebling, John
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438564, 438684, H01L 21425, H01L 2122
Patent
active
057982953
ABSTRACT:
A method for forming al buried contact begins by forming an exposed contact area (22) of a substrate (10) having a surface (11). An undoped or lightly doped layer of polysilicon (32) is formed in contact with the contact area (22). A contiguous masking layer (36) is formed over one or more of the contact areas (22) to cover a contact portion of the layer (32) while exposing other portions of the layer (32). The other portions of the layer (32) are doped with dopant atoms (44). A heat cycle is used to laterally drive the dopant atoms (44) through the layer (32) and downward through a substrate surface (11) to form buried contact substrate-diffused regions (54). The resulting regions (54) have improved voltage punch-through resistance to laterally adjacent electrical diffusion regions since the masking layer (36) creates a longer thermal diffusion path for the dopant atoms which eventually reside in the regions (54).
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Hill, II Winford Lee
Hoover Andrew Paul
McQuirk Dale John
Miller Gregory Alan
Lebentritt Michael S.
Meyer George R.
Motorola Inc.
Niebling John
Witek Keith E.
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