Method for forming a boron phosphorus silicate glass composite l

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437235, 437240, 148DIG118, H01L 2100, H01L 2102, H01L 2190, H01L 2195

Patent

active

051661012

ABSTRACT:
A composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two step process. The composite BPSG layer is characterized by the absence of discernible voids and a surface which is resistant to loss of boron in a subsequent etching step. The two step deposition process comprises a first step to form a void-free BPSG layer by a CVD deposition using gaseous sources of phosphorus and boron dopants and tetraethylorthosilicate (TEOS) as the source of silicon; and then a second step to form a capping layer of BPSG by a plasma-assisted CVD deposition process while again using gaseous sources of phosphorus and boron dpoants, and TEOS as the source of silicon, to provide a BPSG cap layer having a surface which is non-hygroscopic and resistant to loss of boron by subsequent etching.

REFERENCES:
patent: 4708884 (1987-12-01), Chandross et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4892753 (1990-01-01), Wang et al.
Avigal, Inter-Metal Dielectric and Passivation-Related Properties of Plasma PBSG, Solid State Tech., Oct. 1983, pp. 217-224.
Kern, Borophosphosilicate Glasses for Integrated Circuits, Solid State Tech., Jun. 1985, pp. 171-179.
Tong, Process and Film Characterization of PECVD Borophosphosilicate Films for VLSI Applications, Solid State Tech., Jan. 1984, pp. 161-170.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 188-191.
Becker, Process and film characterization of low pressure tetraethylorthosilicate-borophosphosilicate glass, J. Vac. Si. Tech. B, 4(3), Jun. 1986, pp. 732-744.
Shioya, Comparison of Phosphosilicate Glass Films Deposited by Three Different Chemical Vapor Deposition Methods, J. of the Electrochem. Society, vol. 133, No. 9, Sep. 1986, pp. 1943-1950.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming a boron phosphorus silicate glass composite l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a boron phosphorus silicate glass composite l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a boron phosphorus silicate glass composite l will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-921564

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.