Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-31
2007-07-31
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S617000, C438S710000, C257SE23020
Reexamination Certificate
active
10889398
ABSTRACT:
Disclosed is a method for forming a bonding pad of a semiconductor device. The present invention provides a method for forming a bonding pad of a semiconductor device comprising the steps of: (a) forming a top metal line having a predetermined width on a structure of a semiconductor substrate; (b) forming an insulating layer on the top metal line and the structure of the semiconductor substrate; (c) selectively etching the insulating layer to form a bonding pad which exposes portions of the top metal line; (d) performing a plasma treatment over the semiconductor substrate by using CF4, Ar, and O2gas.
REFERENCES:
patent: 5700740 (1997-12-01), Chen et al.
patent: 5925212 (1999-07-01), Rice et al.
patent: 6006764 (1999-12-01), Chu et al.
patent: 6355576 (2002-03-01), Haley et al.
patent: 6638855 (2003-10-01), Chang et al.
patent: 2001/0019180 (2001-09-01), Aoyagi et al.
patent: 2001/0019894 (2001-09-01), Peng et al.
patent: 2001/0055848 (2001-12-01), Minn et al.
patent: 2003/0168086 (2003-09-01), Yamaguchi et al.
patent: 2004/0115934 (2004-06-01), Broz et al.
Chang Won Jung; Method for Forming Multi-Metal Layer of Semiconductor Device; Korean Patent Abstracts; Date of Filing: Apr. 18, 1996; 6 Pages; Application No. 1019960011721; Korean Intellectual Property Office; Date of Publication: Apr. 15, 1999.
Jae Koo Kang; Plasma Process Device; Korean Patent Abstracts; Date of Filing: May 30, 2000; 6 Pages; Application No. 1020000029414; Korean Intellectual Property Office; Date of Publication: Aug. 5, 2000.
Brewster William M.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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