Method for forming a barrier metal layer made of titanium nitrid

Details Method for forming a barrier metal layer made of titanium nitrid Method for forming a barrier metal layer made of titanium nitrid

1997-06-19

1998-08-04

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 438627, 438629, 438656, 438660, 438685, H01L 2144

Patent

active

057893217

ABSTRACT:
A low pressure chloride chemical vapor deposition method for depositing a titanium nitride film within a contact hole formed in an insulation film overlying a silicon substrate is carried out by reacting a nitrogen source gas in plasma state, which contains gas molecules decomposed or excited, with a titanium source gas in non-plasma state, which contains titanium chloride undecomposed so that the titanium nitride film has a good step coverage and a low concentration of residual chlorine.

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