Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-21
2000-06-20
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438635, 438638, 438643, 438653, H01L 2128
Patent
active
060777710
ABSTRACT:
A procedure for forming the barrier layer includes a plasma procedure in the fabricating procedure. The procedure is that an opening is formed on a dielectric layer, which is formed over a semiconductor substrate, by a damascene technology or a patterning process. Then, the plasma procedure is applied by following a procedure in which a halide gas is flowed over the substrate. Then, the halide gas is dissolved by applying plasma to it to form halogen atoms with free bonds, which can enter the dielectric layer to form another halide with the dielectric material and stay close to the surface. Then, a metal layer is formed over the substrate. The metal layer fills the opening and results in a reaction with the halide in the surface of the dielectric layer. A nonvolatile metallic halide layer, therefore, is formed. The nonvolatile metallic halide layer is a nonvolatile insulating layer that acts as the barrier layer between the metal layer and the dielectric layer.
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Lin Yung A.
United Silicon Incorporated
Wilczewski Mary
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