Method for formation of offset trench isolation by the use of di

Details Method for formation of offset trench isolation by the use of di Method for formation of offset trench isolation by the use of di

1996-03-28

1999-05-18

Wortman, Donna C

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C03C15/00

Patent

active

059045434

ABSTRACT:
A method of rounding corners of isolating trenches formed in a substrate with a planar surface includes a first step of forming a masking material on the planar surface. Edges of the masking material are offset from the corners of the isolating trenches. The second method step includes growing an oxide on an exposed portion of the substrate under high temperature. The oxidation under high temperature causes the corners of the isolating trenches to become rounded.

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