Method for formation of isolation oxide regions in semiconductor

Details Method for formation of isolation oxide regions in semiconductor Method for formation of isolation oxide regions in semiconductor

1982-06-01

1985-01-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 29576W, 29580, H01L 21265, H01L 2176

Patent

active

044937407

ABSTRACT:
A method for manufacturing a semiconductor integrated circuit which comprises providing a semiconductor substrate, forming a recess in the substrate through a pattern of an oxidation-inhibiting film, forming a thin film of a material capable of being oxidizing into an insulating oxide such as silicon on the side and/or bottom surface of the recess, and oxidizing the thin film to fill up with the recess with the resulting oxide which increases in volume.

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