Method for formating device on wafer without peeling

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

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438 14, 438 48, H01L 2100

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active

059305932

ABSTRACT:
The present invention provides a method for forming a device on a wafer without peeling, in which the wafer has a substrate forming thereon a first dielectric layer forming thereon a first conducting layer having thereon a device area and an edge area. This method includes steps of a) forming a second dielectric layer on the device area and the edge area, b) forming a photoresist layer on the second dielectric layer, c) selectively removing the second dielectric layer, the photoresist layer, and the first conducting layer from and presenting thereby the device area and the edge area with a desired dielectric layer, and d) forming a metal film on the device area and the edge area.

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