Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-09-04
2007-09-04
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S437000, C438S713000, C438S738000
Reexamination Certificate
active
11010186
ABSTRACT:
A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structure is subsequently performed in order to produce a V-profile.
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Foerster Matthias
Koehler Daniel
Lorenz Barbara
Temmler Dietmar
Dang Trung
Infineon - Technologies AG
Slater & Matsil L.L.P.
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