Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-03
2000-06-20
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438631, 438637, 438675, 438678, H01L 2144
Patent
active
06077780&
ABSTRACT:
A method for filling, with a conductive material, a high aspect ratio opening such as a via hole or a trench opening within an integrated circuit minimizes the formation of voids and seams. This conductive material such as copper which fills the high aspect ratio opening is amenable for fine line metallization. The method of the present invention includes steps for enhancing copper plating processes such as copper electroplating or copper electroless plating. This method includes a first step of copper plating for depositing a thin layer of copper within the integrated circuit opening. This thin layer preferably has a thickness on the field regions surrounding the opening that is less than 1/2 of the width of the opening. Then, copper reflow heats this thin deposited copper layer within the opening to minimize the occurrence of any seams within this copper layer. Finally, a second step of copper plating completely fills the integrated circuit opening. This two-step copper plating process with intermittent copper reflow minimizes formation of seams and subsequently minimizes eletromigration failure within filled integrated circuit openings having high aspect ratio.
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Advanced Micro Devices , Inc.
Berry Renee R.
Bowers Charles
Choi Monica H.
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