Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-29
2006-08-29
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S621000, C438S678000
Reexamination Certificate
active
07098128
ABSTRACT:
Methods of electroless filling electrically different features such as contact openings to form interconnects and conductive contacts, and semiconductor devices, dies, and systems that incorporate the interconnects and contacts are disclosed. The contact openings are electrically shorted together with a selective material, a nucleation layer is selectively deposited onto the area to be plated (e.g., the base of the opening), and a conductive material is electroless plated onto the nucleation layer to fill the opening. The process achieves substantially simultaneous filling of openings having different surface potentials at an about even rate.
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Collins Dale W
Klein Rita J
Gurley Lynne A.
Micro)n Technology, Inc.
Whyte Hirschboeck Dudek SC
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