Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-30
2009-12-29
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S631000, C438S633000
Reexamination Certificate
active
07638434
ABSTRACT:
Method for filling a trench in a semiconductor product is disclosed. A first material is deposited onto a semiconductor product having a surface in which at least one trench is formed. A first layer is formed within the trench and on the surface of the semiconductor product outside the trench. A second material is deposited to form a second layer above the first layer outside the trench and the trench is filled. Chemical mechanical polishing is performed so that the second layer is removed above the first layer outside the trench and whereby the first layer is at least uncovered outside the trench. Residual first material of the first layer is removed by wet-chemical etching.
REFERENCES:
patent: 6709979 (2004-03-01), Komai et al.
patent: 6743268 (2004-06-01), Cote et al.
patent: 6899597 (2005-05-01), Wrschka et al.
patent: 6953742 (2005-10-01), Chen et al.
patent: 7390429 (2008-06-01), Liu et al.
patent: 2003/0113996 (2003-06-01), Nogami et al.
patent: 2005/0077627 (2005-04-01), Yu et al.
patent: 2005/0153546 (2005-07-01), Ahrens et al.
patent: 2006/0008968 (2006-01-01), Brask et al.
patent: 2006/0113675 (2006-06-01), Chang et al.
patent: 2006/0134915 (2006-06-01), Hoang et al.
patent: 2006/0205204 (2006-09-01), Beck
patent: 10 2004 002 407 (2004-11-01), None
patent: 1020040043383 (2004-05-01), None
Infineon - Technologies AG
Picardat Kevin M
Slater & Matsil L.L.P.
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