Method for filling a contact hole having a small diameter...

Details Method for filling a contact hole having a small diameter... Method for filling a contact hole having a small diameter...

2007-10-02

2007-10-02

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S675000, C438S688000, C257SE21584, C257SE21585

Reexamination Certificate

active

10766212

ABSTRACT:
A method for manufacturing a semiconductor device having a semiconductor substrate with a contact hole filled by an aluminum-containing thin film. This manufacturing method includes a step of forming a silicon-containing thin film in a region having a predetermined area including the inner surface of the contact hole on the surface of the semiconductor substrate, an step of forming an aluminum-containing thin film on the surface of the semiconductor substrate on which the silicon-containing thin film is formed, and a step of heating the semiconductor substrate on which the aluminum-containing thin film is formed to such a temperature as to cause silicon to diffuse with respect to aluminum.

REFERENCES:
patent: 4538344 (1985-09-01), Okumura et al.
patent: 5621247 (1997-04-01), Hirao et al.
patent: 6143645 (2000-11-01), Hsu et al.
patent: 59-154040 (1984-09-01), None
patent: 02-116124 (1990-04-01), None
patent: 05-013594 (1993-01-01), None
patent: 2003-303785 (2003-10-01), None

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