Method for filling a contact hole and integrated circuit...

Details Method for filling a contact hole and integrated circuit... Method for filling a contact hole and integrated circuit...

2008-06-24

2008-06-24

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21507

Reexamination Certificate

active

07390737

ABSTRACT:
A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

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European Office Action dated Aug. 30, 2007. English Translation included.

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