Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1994-02-04
1995-10-17
Powell, William
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
216 84, 216 41, B44C 122
Patent
active
054587310
ABSTRACT:
Methods for examining a structure etched in a material layer are disclosed. An inspection aperture next to the structure is formed without appreciably disturbing the etching of the structure. The inspection aperture is formed such that it merges with a portion of the structure's perimeter wall to create an inspection window through which the structure may be readily observed. The observed image of the perimeter wall and bottom of the structure is comparable to that obtained by cleaving, and is achieved without destroying the wafer or substrate on which the etched structure is formed. An etch mark designed to implement the method is also disclosed.
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Chou William T.
Roman James J.
Fujitsu Limited
Powell William
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