Method for fabricting a semiconductor device

Details Method for fabricting a semiconductor device Method for fabricting a semiconductor device

Filed on

1986-11-14

Date issued

1987-10-27

Examiner

Powell, William A.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

156648, 156657, 357 236, 357 72, 357 80, 437 43, 437 52, H01L 2104, H01L 2122, H01L 21306, B44C 122

Type

Patent

Status

active

Patent number

047027967

Description

ABSTRACT:
The present invention is a method for fabricating a semiconductor device, wherein impurity is selectively diffused to surround a region (7) of a second conductivity type as a bit line formed on a semiconductor substrate (1), thereby forming an impurity diffused region (9) of a first conductivity type having high density and, by extending the impurity diffused region (9) in the element separating step to form a high density region of the first conductivity type having high density.

REFERENCES:
patent: 4335502 (1982-06-01), Richman
patent: 4536947 (1985-08-01), Bohr et al.
"Double Polysilicon Dynamic Random-Access Memory Cell with Increased Charge Storage Capacitance", V. L. Rideout, IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3823-3825.

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