Method for fabricting a semiconductor device

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156648, 156657, 357 236, 357 72, 357 80, 437 43, 437 52, H01L 2104, H01L 2122, H01L 21306, B44C 122

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047027967

ABSTRACT:
The present invention is a method for fabricating a semiconductor device, wherein impurity is selectively diffused to surround a region (7) of a second conductivity type as a bit line formed on a semiconductor substrate (1), thereby forming an impurity diffused region (9) of a first conductivity type having high density and, by extending the impurity diffused region (9) in the element separating step to form a high density region of the first conductivity type having high density.

REFERENCES:
patent: 4335502 (1982-06-01), Richman
patent: 4536947 (1985-08-01), Bohr et al.
"Double Polysilicon Dynamic Random-Access Memory Cell with Increased Charge Storage Capacitance", V. L. Rideout, IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3823-3825.

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