Method for fabrication of thin-film bolometric material

Details Method for fabrication of thin-film bolometric material Method for fabrication of thin-film bolometric material

1992-07-23

1994-02-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419226, C23C 1434

Patent

active

052883809

ABSTRACT:
A technique for fabrication of thin-film bolometric materials for use in -ohm resistance multi-detector devices. A group IB periodic table element is reactively co-sputtered with small amounts of a dopant in a reduced gas atmosphere. The reactive co-sputtering is achieved in an oxygen containing atmosphere, where the dopant has an oxide that is highly temperature dependent with an electrical resistance that varies in accordance with the oxide content of the dopant. A reduced electrical resistance of the resultant doped material is achieved.

REFERENCES:
patent: 3899407 (1975-08-01), Eastwood et al.
Sargent-Welch Periodic Table of the Elements, 1968.

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