Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-03-04
2008-03-04
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S750000, C438S751000
Reexamination Certificate
active
07338908
ABSTRACT:
An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.
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Cleary Timothy Patrick
Koos Daniel A.
Mayer Steven T.
Mountsier Thomas
Park Heung L.
Beyer & Weaver, LLP
Novellus Systems Inc.
Vinh Lan
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