Method for fabrication of semiconductor devices

Details Method for fabrication of semiconductor devices Method for fabrication of semiconductor devices

1978-08-09

1981-04-14

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 156665, 204325, 204 38A, 204 58, 430314, 430315, H01L 21308

Patent

active

042617928

ABSTRACT:
A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etching mask when the conductor or semiconductor layer is etched.

REFERENCES:
patent: 3576630 (1971-04-01), Yanagawa
patent: 3796644 (1974-03-01), Bernard
patent: 3808108 (1974-04-01), Herb et al.
patent: 3825454 (1974-07-01), Kikuchi et al.
patent: 3833434 (1974-09-01), Kikuchi et al.
patent: 3991231 (1976-11-01), Trausch
patent: 4035206 (1977-07-01), Rioult et al.

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