Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-14
2010-08-10
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S156000, C438S300000
Reexamination Certificate
active
07772053
ABSTRACT:
After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator layer and the source-drain material film in the opening portion. Thereafter, a gate material film embedding the opening portion is formed on the gate insulator. Subsequently, a cap film is formed on the gate material film, thereby forming the gate made of the gate material film. Then, a mask layer is formed on the source-drain material film. Next, the source-drain material film not protected by the mask layer is removed while protecting the gate by the cap film, thereby leaving the source-drain material film on both sides of the gate. The source-drain material film on one side becomes the source and that on the other side becomes the drain.
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Ishii Tomoyuki
Kameshiro Norifumi
Mine Toshiyuki
Sano Toshiaki
Miles & Stockbridge P.C.
Picardat Kevin M
Renesas Technology Corp.
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