Method for fabrication of devices in a multi-layer structure

Details Method for fabrication of devices in a multi-layer structure Method for fabrication of devices in a multi-layer structure

2007-11-28

2009-06-02

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S167000, C438S169000, C438S191000, C438S738000, C438S740000, C257S191000, C257SE21403, C257SE21407

Reexamination Certificate

active

07541232

ABSTRACT:
A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors includes defining gate recesses in the structure. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.

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