Method for fabrication of close-tolerance lines and sharp emissi

Details Method for fabrication of close-tolerance lines and sharp emissi Method for fabrication of close-tolerance lines and sharp emissi

1996-07-19

1999-09-14

Gorr, Rachel

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430323, 430324, 737228, 737229, 737241, 737243, G03C 500

Patent

active

RE0363057

ABSTRACT:
A method for fabricating submicron lines over a semiconductor material by creating a narrow hard mask over the material using a narrow void-producing process. The narrow void is thus used as a mask to form lines that are narrower than those that can be produced by current lithography techniques. The method can also be used to create sharp emission tips for field effect display devices.

REFERENCES:
patent: 4634645 (1987-01-01), Matsuda et al.
patent: 4671970 (1987-06-01), Keiser et al.
patent: 5032491 (1991-07-01), Okumura et al.
Van Zant, Microchip Fabrication--A Practical Guide to Semiconductor Processing, McGraw-Hill Publishing Company, pp. 88-89, 162-163, 222-223, 308-309, 1990.

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