Method for fabrication of a semiconductor device and structure

Details Method for fabrication of a semiconductor device and structure Method for fabrication of a semiconductor device and structure

2011-06-14

2011-06-14

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S197000, C257SE21023, C257SE21598

Reexamination Certificate

active

07960242

ABSTRACT:
A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks.

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