Method for fabrication of a semiconductor device and structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S067000, C257S069000, C257S353000, C257SE21193

Reexamination Certificate

active

07964916

ABSTRACT:
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.

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