Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-13
2007-02-13
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
10755844
ABSTRACT:
A method for producing a contact structure on a structured surface comprising producing a first conductive layer on the structured surface, wherein the first conductive layer comprising tungsten. A conductive seed layer is produced on the first conductive layer, the contact structure being produced by electroplating on the seed layer. The first conductive layer serves as an etch stop for selectively removing substrate material from the backside.
REFERENCES:
patent: 5608264 (1997-03-01), Gaul
patent: 5618752 (1997-04-01), Gaul
patent: 5767001 (1998-06-01), Bertagnolli et al.
patent: 6348731 (2002-02-01), Ashley et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0063311 (2002-05-01), Siniaguine
patent: 2002/0084513 (2002-07-01), Siniaguine
patent: 2002/0127868 (2002-09-01), Siniaguine
patent: 2002/0163072 (2002-11-01), Gupta et al.
patent: 2003/0215984 (2003-11-01), Pogge et al.
patent: 2004/0253809 (2004-12-01), Yao et al.
patent: 19816245 (1999-10-01), None
patent: 1094504 (2001-04-01), None
patent: 1391924 (2004-02-01), None
patent: 2816758 (2002-05-01), None
patent: 2002190477 (2002-07-01), None
patent: WO 03/079431 (2003-09-01), None
Burkett et al., “Processing Techniques for 3-D Integration Techniques”, Superficies y Vacio 13, 1-6, Dec. 2001. (6 pages).
Ahrens Carsten
Huber Jakob
Seidel Uwe
Infineon - Technologies AG
Maginot Moore & Beck
Malsawma Lex H.
LandOfFree
Method for fabrication of a contact structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabrication of a contact structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication of a contact structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3835600